Abstract
Vacuum deposited aluminum films are extensively used as inter- and intra-connects on silicon integrated circuits for their advantageous electrical and metallurgical properties. Hillock growth occurs after annealing of the films in the form of aluminum projections normal to the film surface. The growth of these hillocks (as well as depressions) takes place during the heating and cooling portions of the annealing cycle caused by differences in expansion coefficient between film and substrate. Diffusional creep (with grain boundary diffusion) or grain boundary sliding is believed to occur in these films to relieve the thermally induced stresses which result in annealing hillocks and depressions. Foreign impurities such as Cu in the aluminum film or the surface anodization of the aluminum inhibit hillock growth. Both approaches are being explored to achieve essentially hillock free deposits. These results support either grain boundary sliding or oxide film voids (on the aluminum film) as possible nucleation sites for these growths.
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