Abstract
ABSTRACTStructure and composition are reviewed for different surface phases of SiC(0001) and SiC(0001). The chemistry of well ordered phases spans from Si rich to graphitic composition with the excess elements arranged in adlayers and/or large scale reconstruction patterns. On SiC(0001) the Si rich (3×3) surface allows for step flow growth of monocrystalline homoepitaxial layers due to an extremely efficient dangling bond saturation. Si rich preparation or oxidative treatment are used for a controlled evolution of different stacking sequences on the adatom phase on SiC(0001) and could be utilized for the development of polytype heterostructures. On SiC(0001) a (2×2) phase shows three-fold coordinated adatoms with a different surface stacking reflecting the different growth behaviour of this surface. An epitaxially well matching silicon oxide monolayer can be prepared on both surface orientations by using a hydrogen etching or plasma treatment promising to facilitate low defect oxide films for MOS devices.
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