Abstract
The SiC surfaces were cleaned by the hydrogen plasma with ECRPEMOCVD plasma system at low temperature of 200°C, after the traditional wet cleaning. The surfaces were investigated by RHEED and X-ray Photoelectron Spectroscopy before and after hydrogen plasma treatment. The RHEED imagines showed that the SiC surfaces by hydrogen plasma treatment were more flatter than the SiC surfaces by the traditional wet cleaning, and we found the result that more treatment time, more flatter. The XPS spectra examinations indicated that the surface oxides reduced obviously and the C/C-H compounds on the SiC surface were removed by hydrogen plasma treatment, so the antioxidant ability of the SiC surface was improved.
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