Reconfigurable Piezoelectric MEMS Resonator Using Phase Change Material Programmable Vias

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This paper reports on the demonstration of a reconfigurable aluminum nitride (AlN) piezoelectric microelectromechanical systems (MEMS) resonator using phase change material (PCM) programmable vias. Two $10\hbox{-}\mu \text{m}\times 10\hbox{-}\mu \text{m}$ Ge50Te50 PCM programmable vias are monolithically integrated with a piezoelectric MEMS resonator, and used to dynamically reconfigure the terminal connections of its top and bottom electrodes, which determine the distribution of the electric field across the piezoelectric layer and therefore the equivalent electrical impedance of the resonator. The ability to reconfigure the device to operate in four different states is experimentally demonstrated: 1) lateral field excitation mode (both vias ${{{\scriptstyle OFF}}}$ ); 2) resonator static capacitance, $C_{0}\approx 484~{\rm fF}$ ; 3) motional resistance, $R_{m}\approx 320~\Omega$ ; 4) thickness field excitation mode-high impedance (via 1 ${{{\scriptstyle ON}}}$ , $C_{0}\approx 564~{\rm fF}$ ; $R_{m}\approx 470~\Omega )$ ; 5) thickness field excitation mode-low impedance (via 2 ${{\mathbf{\scriptstyle ON}}}$ , $C_{0}\approx 1459~{\rm fF}$ ; $R_{m}\approx 155~\Omega )$ ; and 6) SHORT (both vias ${{\mathbf{\scriptstyle ON}}}$ , the resonator is reconfigured into a short circuit). This paper sets a milestone toward the demonstration of an innovative technology platform, based on the monolithic integration of AlN resonators and PCM switches, capable of delivering highly reconfigurable radio frequency components, enabling new radio architectures with enhanced spectrum coverage. [2015-0040]