Abstract
The transient enhanced diffusion of dopants in silicon is known to be governed by the interaction of extended defects and intrinsic point defects. In this work we present calculations of the formation of extended defects and their interactions with point defects, based on ab-initio calculations of Gilmer, Caturla, and coworkers. Dissolution of the extended defects may occur either by diffusion of point defects to surfaces and interfaces, or by reactions in the bulk. The work presented here emphasizes especially the reaction of point defects with extended defects which is shown to be more effective than bulk recombination.
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