Abstract
AbstractProgress in characterizing, understanding and controlling intrinsic point defect generation and clustering during Cz growth of single crystals is discussed. It is shown that intrinsic point defects in Si and Ge behave quite similar and that the observed clustering behaviour can be understood taking into account the impact of extrinsic point defects, doping and strain on the formation, recombination and diffusivity of the intrinsic point defects in both materials. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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