Abstract
Recombination and generation at slightly mismatched heterojunctions under optical excitation conditions are investigated with a model based on the ambipolar diffusion equation. This model is used to fit experimental photoluminescence power dependencies in order to analyze interface-related parameters as a function of lattice mismatch. Power dependencies are derived for photoluminescence of directly excited surface layers and photoluminescence generated indirectly by carrier diffusion or photon recycling through the interface region. Experimental results are presented for AlGaAs/GaAs and GaInP/GaAs heterostructures.
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