Abstract
Recent advances in solar cells designed to operate under high-level injection conditions have produced devices that are approaching some of the limits imposed by the fundamental band-to-band Auger recombination in Silicon. A device has been optimized to study this recombination by using the fabrication technology developed for point-contact solar cells. Using both steady-state and transient measurements, the recombination rates in high-resistivity Si in the injected carrier density range of 1015to 2 × 1017carriers / cm3were investigated. The coefficient of the recombination, which depends on the carrier density cubed, is found to be 1.66 × 10-30cm6/s ± 15 percent. This result is four times higher than the ambipolar Auger coefficient commonly used in the modeling of devices that operate in this injected carrier density range and lowers the expected limit efficiencies for silicon solar cells.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
