Abstract
AbstractA new analytical model is proposed to describe the kinetics of trapping and recombination of charge carriers in complex systems with an arbitrary spatial distribution of traps and recombination centres. The structural properties of a material are described by two functions Γm and Γn irrespective of the thermal history of the sample. A simple method is proposed to determine the function Γm from simultaneous thermoluminescence (TL) and thermally stimulated conductivity (TSC) measurements.
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