Abstract
Interfacial reactions between (100) InP and Pd were investigated as part of a systematic study aimed at investigating the stability of planar nonalloyed metallizations to InP. A 50-nm-thick Pd film was deposited on an InP substrate, and parts of it were subsequently thermally treated for 30 min at temperatures varying from 100 to 500 °C in steps of 50 °C. Separate characterizations of the Pd, In, and P depth distributions were obtained using mass and energy dispersive recoil spectrometry. The different phases were determined using x-ray diffraction, and scanning electron microscopy was used to study the surface topography. It is assumed that the interaction starts in the as-deposited sample, and definite formation of a ternary phase with the suggested composition Pd5In2P2 starts at an annealing temperature of 100 °C. At 250 °C all Pd is chemically reacted. Preferential outdiffusion of P leads to a loss of P from the surface at 500 °C, and the only phase observed in the x-ray diffraction spectrum from the surface is PdIn.
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