Abstract
Effects of N2 plasma treatment of titanium nitride (TiN)/borophosphosilicate glass (BPSG) substrates on chemical vapor deposition(CVD) of copper(Cu) films were studied. Selective Cu-CVD on TiN in the presence of BPSG was achieved by N2 plasma treatment prior to the Cu deposition. The Cu deposition temperature, the plasma treatment temperature and the plasma power were critical factors for the selective Cu deposition. The X-ray photoelectron spectroscopy (XPS) results revealed that the reduction of OH groups of BPSG contributed to the selective CVD of Cu films. Surface morphologies, electrical resistivities, and (111) orientations of the Cu films selectively deposited on N2 plasma treated TiN were as good as or better than those of Cu films deposited on untreated TiN.
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