Recoil and charged particle energy spectra from the natSi(n,x) reaction and the Si semiconductor detector response to the 14 MeV neutrons

Abstract

The energy spectra of light and heavy charged particles generated by the 14 MeV neutrons in silicon nuclei and in the Si semiconductor detector (SSD) were analysed. The existing measurements were used to validate the corresponding energy differential cross sections from major evaluations ENDF/B-VIII.0 and JEFF-3.3. The required data were extracted by the various codes: NJOY21, SPKA and MCNP6. It was shown that both evaluations underestimate the high energy part of the 28Si(n,x)p- and α-particle spectra by ≤50%, whereas at smaller emission energies no experimental data even exist. The calculation of the atom displacement damage in SSD reveals that the secondary protons produce additionally ≈15% of damage, whereas the contribution from secondary alphas is impossible to estimate since the Si(α,x) recoil data are not available.The single experiment, carried out by K. Yageta and co-workers in 1988, reported the energy spectra in the Si semiconductor down to the rather low energy of ≈0.3 MeV, at which the production of reaction recoils dominates over the light ions. The Monte Carlo simulation of this experiment was performed by MCNP6. The generation and transport of all relevant ions were taken in account. The energy depositions from protons or alphas were summed with their associated recoils after correction for non-ionization losses. The neutron reactions in the dead layer of the SSD were shown to increase the counts in active layer by (1–20)% depending on sort of ions. The impact of the field funneling effect was studied. Consideration of all these underlying processes has eventually allowed a reasonable reproduction of this experiment.