Recharging process of commercial floating-gate MOS transistor in dosimetry application

Russell Duane,Stefan D Ilić,Srboljub Stanković,Goran S Ristić,Marko S Andjelković,Milija Sarajlić,Alberto J Palma

doi:10.1016/j.microrel.2021.114322

Abstract

We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.

Highlights

Different types of ionizing radiation-sensitive dosimeters have emerged during the development of technology from traditional thermoluminescent detectors [1], through radiation field effect transistors (RadFET-s) [2,3,4], ionizing chamber based dosimeters [5,6], MOScapacitance based sensor [7] and floating gate structures [8,9,10,11]
We have investigated the sensitivity of Electrically Programmable Analog Device (EPAD) to gamma radiation with zero, static and dynamic bias at the control gate, the effect of absorbed dose and gate biasing on reprogramming characteristic, spontaneous recov ery and annealing after irradiation [19,20]
Comparing the drift values after programming the non-irradiated component with the drift values after irradiation, it can be observed that the drift value is greater after programming than after irradiation, which means that structural defects during irradiation are significantly smaller than the residual charge that occurs after programming, which shows that this component due to its special floating gate design is well

Summary

Introduction

Different types of ionizing radiation-sensitive dosimeters have emerged during the development of technology from traditional thermoluminescent detectors [1], through radiation field effect transistors (RadFET-s) [2,3,4], ionizing chamber based dosimeters [5,6], MOScapacitance based sensor [7] and floating gate structures [8,9,10,11]. Spe cial floating gate sensor with zero bias operation and reprogramming capabilities has been designed in a standard 0.6 μ CMOS technology by the group of authors from CERN in collaboration with IC Malaga [12,13,14,15]. Realising the floating gate dosimeter's great potential, we based our research on the ALD1108E integrated circuit, which consists of four A group of authors from United Kingdom used this device as a radiation dosimeter [16,17].

Objectives

Findings

Discussion

Conclusion