Abstract
Several trends occurring in the past few years in our understanding of bias temperature instability (BTI) are reviewed. Among the most important is the shift toward analyzing BTI relaxation with the tools originally developed for describing low-frequency noise. This includes the interpretation of the time, temperature, voltage, and duty cycle dependences. It is shown that a wealth of information about gate oxide defect properties can be obtained from deeply scaled devices and correctly modeled based on nonradiative multiphonon theory. It is then shown how detailed understanding of individual defect properties can allow interpreting the variability issues of future complementary metal-oxide semiconductor technologies. This is complemented by showing the most promising technological solutions for BTI.
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