Abstract

Abstract A brief review is given about recent work on silicon inversion layers at the high magnetic field facility in Grenoble. Shubnikov-De Haas oscillations in SOS devices in fields up to 20 Tesla showed a beating effect which presumably arises from anisotropic internal stress. Cyclotron resonance experiments under uniaxial pressure on (100) MOSFETs revealed the occupation of the higher subband system with increasing pressure, which did not show-up in SdH oscillations. In (111) devices with 6-fold valley degeneracy structure has been observed in the SdH effect at high magnetic fields around 20 Tesla, which is interpreted as valley splitting. New data are reported about energy losses of electrons and holes in the non-ohmic regime.

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