Recent Progress of Ge Technology for a Post-Si CMOS

Abstract

Ge FET performance has been dramatically improved. Particularly n-MOSFET mobility is sharply going up and approaching to 2,000 cm2/Vsec. Although there are still insufficient properties and issues poorly understood so far, considerably favorable results are increasing. These are basically based on the knowledge about what determines the quality of Ge/dielectrics interface, and why electron mobility has so far been severely degraded in the inversion layer. In Si CMOS technology, the Si/SiO2 interface has been long investigated. In that sense, Ge/GeO2 interface should be intensively studied to establish Ge gate stack technology. So, this paper mainly discusses Ge n-MOSFETs with GeO2 gate dielectrics.