(Invited) Feasibility of Ge CMOS for Beyond Si-CMOS

Abstract

To make Ge CMOS devices feasible, we need to know what determines the quality of Ge/dielectrics interface, and understand why electron mobility has so far been severely degraded in the inversion layer. In Si CMOS technology, the Si/SiO2 interface has been long investigated, and it is a strong basis even for high-k gate stack technology. In that sense, Ge/GeO2 interface should be intensively studied to make Ge gate stack possible. So, this paper mainly discusses Ge n-MOSFETs with GeO2 dielectric film.