Abstract

AbstractRecently, the research and development of crystalline silicon solar cells in Japan has greatly advanced. Fundamental research has been conducted on the recombination and passivation of minority carriers at Si/SiO2 interfaces and in those bulk regions containing grain boundaries. Qualities of silicon feedstock and substrates have been improved and large‐area cell efficiencies using Czochralski single and cast polycrystalline substrates have reached 20% and 17%, respectively, by using low‐cost cell fabrication processes. Such high efficiency values are realized by tenacious improvement of substrate quality and the development of new processes for fabricating solar cells.

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