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https://doi.org/10.1109/drc.2010.5551900
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Cite Publication Date: Jun 1, 2010 |
Affiliation: NEC (Japan)
In this paper, we describe a GaN switching device with high V± uniformity and low on-resistance using novel piezo neutralization (PNT) technique and a 76 GHz GaN power amplifier(PA) on a Si substrate using 0.15-μm-gate GaN FETs and low-loss Coplanar Waveguide (CPW) lines.
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