Abstract

Amorphous selenium (a-Se) is a photoconductive material that has been intensively investigated from its early application in xerography to its present application in flat panel X-ray imagers. It can be deposited up to a few millimeters thick over a large area. Its high vapor pressure yields uniform coverage in novel device structures for low-cost and large-area applications. The evidence of avalanche multiplication in a-Se and application of a-Se in high-gain avalanche rushing photoconductor video-tubes goes back to the early 1980s. Over the past decade there has been increasing research interest in novel detector structures and integration of a-Se with new materials to leverage the avalanche properties. We summarize some of the shortcomings of a-Se such as low charge carrier mobility, low charge conversion efficiency, depth dependence, and high dark current at high electric fields. We then highlight recent developments in a-Se-based devices to address these shortcomings and enable picosecond timing performance and high detection efficiency.

Highlights

  • A MORPHOUS selenium has a low melting point and high vapor pressure which makes it less complex and more economical to deposit thick and uniform layers over a large area by for example thermal evaporation

  • Amorphous selenium (a-Se) has good X-ray photoconductivity, discovered in the 1940s, and can be used in X-ray imaging. amorphous selenium (a-Se) was heavily used in the photocopy industry until it was replaced by inexpensive organic photoconductors in the late 1980s [1]

  • With a strong electric field applied (10 V/μm or higher) [9], a-Se exhibits excellent X-ray photoconductivity, especially in the energy range used for Manuscript received September 7, 2019; revised October 26, 2019; accepted October 26, 2019

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Summary

INTRODUCTION

A MORPHOUS selenium has a low melting point and high vapor pressure which makes it less complex and more economical to deposit thick and uniform layers over a large area by for example thermal evaporation. Besides this advantage, amorphous selenium (a-Se) has good X-ray photoconductivity, discovered in the 1940s, and can be used in X-ray imaging. But not least, a-Se direct detectors have been proven to have superior spatial resolution [23] These advantages have kept researchers working to develop better a-Se-based X-ray imagers. The discovery of new materials, and the refinement of manufacturing techniques, many detectors with superior properties have been developed

CHALLENGES OF AMORPHOUS SELENIUM-BASED X-RAY DETECTORS
Low Charge Carrier Mobility
Low Charge Conversion Efficiency
Depth Dependence
Dark Current
DEVELOPMENT AND EMERGING TECHNOLOGIES
The Use of the Avalanche Process
The Manipulation of Electric Field
Charge Injection Blocking
Impurities
Combination With Advanced Pixel Sensors
Findings
CONCLUSION

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