Abstract
Future CMOS technologies will require the use of substrate material with a very high mobility in order to fulfil the performance requirements. Therefore, combination of Ge p-MOS with n-MOS devices made out of high mobility III/V compounds, such as GaAs, has recently received some attention for its possible use in advanced CMOS applications. In this work, the physical, chemical and electrical properties of Al2O3 high-κ oxide deposited on Ge and GaAs, using Molecular Beam Deposition (MBD) technique, have been investigated.
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