Recent developments in semiconductor piezoresistive devices

Abstract

A review is given of recent developments in semiconductor piezoresistive devices. The use of semiconductors, and particularly silicon, in strain gages is discussed. Then a description is given of the advances that have recently opened up new possibilities for piezoresistive devices, especially in transducer applications. These include heavy doping to minimize the undesirable temperature dependence of the piezoresistive output, the achievement of the heavy doping in silicon by diffusion techniques, and the application of this diffusion technology to the fabrication of new types of integrated piezoresistive transducers. Finally, other potentially useful semiconducting piezoresistive materials are discussed.