Abstract
A discussion of recent results in the preparation of Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te crystals by a high pressure Bridgman (HPB) method and use of the crystals for gamma- and x-ray detectors is presented. Resistivities in excess of 10<SUP>11</SUP> ohm-cm are achieved in Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te without impurity doping. The consequential low detector leakage currents lead to excellent energy resolution, 8.4% (FWHM) at 30 keV, for example. Useful energy spectroscopy can be performed at temperatures up to 100 degree(s)C. The dependence of leakage current on temperature from -40 degree(s)C to 100 degree(s)C implies a Fermi level at mid-gap for x equals 0.2. HPB grown Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te crystals exhibit relatively low defect content, as evidenced by etch-pit-densities <EQ 10<SUP>4</SUP> cm<SUP>-2</SUP>, double-crystal-rocking-curve linewidths of 10 - 15 arc-seconds and sharp, bright emission lines, with excitonic features, in low temperature photoluminescence measurements. Results of flash x ray experiments indicate high current sensitivity, low leakage current, and good temporal response. Preliminary results of Cd<SUB>1-x</SUB>Zn<SUB>x</SUB>Te imaging detector array studies are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
