Abstract
The fast switching speeds, large current handling capability and superior thermal properties of SiC makes SiC Vertical Trench JFETs (VJFETs) ideal candidates for power electronic applications. This paper reports on the recent progress in the development of a low resistance 1200V/25mOhm EM VJFET and a new range of DM JFETs with ratings from 650V to 1700V, and resistances below 22mOhms. The lowest rated voltage class of VJFET, the 650V/55mOhm DM VJFET designed for use in 600-800V applications, has a breakdown voltage of 900V and RDSON,SP of 1.46mOhm-cm2. This RDSON,SP is the lowest reported value for a VJFET and is an order of magnitude lower compared to the best Si Super Junction (SJ) MOSFETs reported in the literature.
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