Abstract
Zinc Oxide (ZnO) is a versatile wide bandgap material with good thermal conductivity, high electron mobility, high transparency, low temperature fabrication and a large exciton binding energy. This chapter focuses on ZnO material for thin-film heterojunction-based structures and their recent applications. The latest advancements on ZnO nanostructure-based UV detectors, gas sensors, memory devices and other applications are presented. Initially, ZnO and its properties are reported. Then, the applications are reviewed. p-Si/n-ZnO heterojunction diode fabricated by different techniques is discussed. Crystalline structure and surface morphology of ZnO obtained using X-Ray diffraction analysis (XRD), atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) are reviewed. The sensing operations of the various ZnO thin films in resistive configurations presented in recent research are outlined. ZnO thin films can been grown by various deposition techniques on a silicon substrate at room temperature condition under controlled pressure. Various parameters, such as response magnitude at different temperature and gas concentrations, response time and recovery time, can be obtained. Various RRAM devices have been fabricated with the structures, such as Si/Pt/Ti/ZnO/Ag and their switching characteristics, which have been reported in the literature.
Published Version
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