Abstract
III-nitride-based semiconductors with wide-band-gape are deemed a potential candidate due to the superior residual performance and high energy conversion efficiency. Therefore, this paper mainly covers the recent progress and the prospects of AlGaN based LEDs, which were discussed and proved in already published articles. Thus, the development of the current device structure on sapphire substrate and to know the technique that how to increase the extraction-light Efficiency (EQE) and internal quantum (IQE) of AlGaN based light-emitting diodes (LEDs), based on the discussion on the optical and molecular structure. By combining GaN with AlN, the light absorption of AlGaN LEDs spans the entire ultraviolet range (210 nm-400 nm), making these types of LEDs ideal in many fields as biological, environmental, and medical areas, etc. However, technical terms still face significant problems in AlGaN- based LEDs and low external quantum efficiency, attributable to intrinsic threading dislocation.
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