Abstract
The authors have investigated the early stages of indium island formation and growth by vapor phase deposition on room temperature sapphire using real-time grazing incidence small angle x-ray scattering (GISAXS), followed by ex-situ atomic force microscopy and scanning electron microscopy. The results are consistent with the formation and coalescence of hemispherical islands, as described by Family and Meakin. Monte Carlo simulations of systems of coalescing islands were used to supplement and quantify the results of GISAXS, and a good agreement is seen between the data and the simulations.
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