Abstract
GaAs(001) surfaces during MBE growth was observed by scanning microprobe RHEED. A microprobe electron gun for RHEED was installed in an MBE chamber. Using intensity variation of RHEED patterns produced by the scanning of an incident beam, we obtained a microscopic image highly sensitive to the surface structure. Scanning reflection electron images revealed granular features over the whole surface, which came from small undulations on the surface of the MBE grown layer. The undulation became larger along [1̄10] direction as growth proceeded. No contrast was observed in the secondary electron images.
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