Abstract
In-situ laser light scattering is shown to yield valuable real-time information on the development of surface micro-topography during GaAs MBE growth. In-vacuo oxide desorption results in a large increase in scattered light intensity. Ex-situ atomic force microscopy has indicated the formation of a high density (>10 9 cm -2) of surface pits, attributed to localized GaAs consumption. Subsequent GaAs homoepitaxial growth (at 600°C) results in the development of an anisotropic ridged topography (ridge axes parallel to [110] with ridge dimensions increasing with epilayer thickness (peak-valley ≤ 12 nm for a 2.0 μm thick epilayer). Post growth in-vacuo annealing generates relatively flat surfaces, dominated by misorientation steps. For a 1 μm thick epilayer, annealing has a long time constant ( > 30 min at 600°C).
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