Abstract
Vertical zinc blende GaAs/AIGaAs heterostructure nanowires were grown at different temperatures by met-alorganic chemical vapor deposition via Au-assisted vapor-liquid-solid mechanism. It was found that radial growth can be enhanced by increasing the growth temperature. The growth of radial heterostructure can be realized at temperature higher than 500°C, while the growth temperature of axial heterostructure is lower than 440°C. The room temperature photoluminescence properties of the nanowires were investigated and the relevant growth mechanism was discussed.
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