Abstract
Gratings, one of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems. The grating period is the key parameter that limits the dispersion and resolution of the system. With the rapid development of large X-ray science facilities, gratings with periodicities below 50 nm are in urgent need for the development of ultrahigh-resolution X-ray spectroscopy. However, the wafer-scale fabrication of nanogratings through conventional patterning methods is difficult. Herein, we report a maskless and high-throughput method to generate wafer-scale, multilayer gratings with period in the sub-50 nm range. They are fabricated by a vacancy epitaxy process and coated with X-ray multilayers, which demonstrate extremely large angular dispersion at approximately 90 eV and 270 eV. The developed new method has great potential to produce ultrahigh line density multilayer gratings that can pave the way to cutting edge high-resolution spectroscopy and other X-ray applications.
Highlights
Gratings, one of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems
Current commercial gratings used for Extreme ultraviolet (EUV) and soft X-ray regions are generally fabricated by mechanical ruling, or laser interference lithography techniques and have a typical groove density of no more than 5000 lines mm−1
The diffraction efficiency and ultra-large angular dispersion of these multilayer gratings were demonstrated by EUV and soft X-ray measurements performed in a synchrotron radiation facility
Summary
One of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems. We report a maskless and high-throughput method to generate wafer-scale, multilayer gratings with period in the sub-50 nm range. They are fabricated by a vacancy epitaxy process and coated with X-ray multilayers, which demonstrate extremely large angular dispersion at approximately 90 eV and 270 eV. Nanostructures were generally fabricated by top–down methods, such as conventional photolithography, which require masks that nearly reach their technical limits to further scale down the structure size[2]. For the development of high-resolution spectroscopy techniques such as resonant inelastic X-ray scattering (RIXS), extremely high line density gratings with a large angular dispersion and good efficiency are urgently required[19]. The diffraction efficiency and ultra-large angular dispersion of these multilayer gratings were demonstrated by EUV and soft X-ray measurements performed in a synchrotron radiation facility
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