Abstract
The routine synthesis of ultra dense nanowires arrays appears as an inescapable requirement to implement future generations of nanodevices. In this study, we demonstrate the fabrication of vertical of ultra dense (4×1010cm−2) Si NWs arrays using a top-down fabrication strategy. The developed process also feature nearly perfect anisotropy (98.5%), 100% yield and an excellent surface cleanliness based a self-limiting oxidation mechanism that develops in 1D nanostructure.
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