Realization of Si 1-x-y Ge x C y /Si heterostructures by pulsed-laser-induced epitaxy of C+implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

Jacques Boulmer,Francois H Julien,Elieser Finkman,D Debarre,G Calvarin,Keith A Nugent,Pere Roca I Cabarrocas,D Bouchier,A Desmur-Larre,Christian Godet,Philippe Boucaud,J.-B Ozenne,H Yang,C Clerc,C Guedj,R Laval,Jan J Dubowski

doi:10.1117/12.206273

Realization of Si 1-x-y Ge x C y /Si heterostructures by pulsed-laser-induced epitaxy of C+implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)

Jacques Boulmer, Francois H Julien + Show 15 more

https://doi.org/10.1117/12.206273

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Publication Date: Apr 10, 1995

Citations: 4

Affiliation: Institut Polytechnique de Paris, University of Paris-Sud, Technion – Israel Institute of Technology, École Centrale d'Électronique, University of Melbourne, École Polytechnique

#Pulsed Laser Induced Epitaxy #Si Heterostructures + Show 8 more

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Abstract

Si1-x-yGexCy / Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84/Ge(subscript 0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channeling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy, X-ray diffraction and Raman spectroscopy. First results show that laser induced epitaxy is effective, provided that laser fluence exceeds a threshold for which the melted depth is larger than the initial SiGeC layer. In addition, carbon incorporation in substitutional sites is demonstrated.

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