Abstract
Si 1−x−y Ge x C y Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C + implanted pseudomorphic Si 0.84Ge 0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channelling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy and ion channelling, X-ray diffraction, secondary ion mass spectrometry, and infrared and Raman spectroscopy. We show that PLIE occurs when the laser fluence exceeds a threshold for which the liquid-solid interface reaches the crystalline substrate at each laser pulse. Above this threshold, germanium and carbon atoms diffuse inside the melted layer, and carbon incorporation in substitutional sites increases with the laser fluence and the number of pulses. The resulting SiGeC layers are pseudomorphic.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
