Abstract
ZnO based LEDs are received great attention as it has wide band gap (∼3.36 eV) and large exciton binding energy (∼60 meV) at room temperature [1]. It is known that the basic components for LEDs are high quality p-type and n-type layers. The undoped ZnO exhibits intrinsic n-type conductivity and doping with III group elements such as B, In, Al, and Ga will enhance the electrical properties. But, it is too difficult to produce high quality p-type ZnO layers due to compensation of native defects, formation of deep acceptor and low solubility of dopants.
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