Realization of MoTe2 CMOS inverter by contact doping and channel encapsulation

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The Fermi level pinning effect significantly limits the application of electrical devices based on two-dimensional materials like transition metal dichalcogenide. Here, a CMOS inverter, which is comprised of an n- and a p-MoTe2 FET with optimized properties, has been successfully fabricated by using contact doping and channel encapsulation methods. Contact doping is to control the polarity of MoTe2-FET and improve contact properties, which is achieved by laser irradiation in different environmental conditions. The channel of two MoTe2-FETs was encapsulated by hexagonal boron nitride (h-BN) to enhance carrier mobility and device stability. The fabricated CMOS inverter showed a very high gain value of 31 at V dd = 4 V at RT.