Abstract
Smooth GaAs layers were successfully grown by migration-enhanced epitaxy on exactly (110) oriented substrates. The surface of layers grown by conventional molecular beam epitaxy was completely covered with facets, whose density was higher than 106 cm−2. The facet density was reduced remarkably by three orders of magnitude using the migration-enhanced epitaxy method. Observing the intensity oscillations of the specular spot of reflection high-energy electron diffraction patterns, the growth mode and the migration characteristics of surface adatoms have been investigated.
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