Abstract
InP was successfully grown by the migration-enhanced epitaxy (MEE) mode using polycrystalline InP as the phosphorus source in a conventional GaAs-type molecular beam epitaxy (MBE) chamber. A long and persistent reflection high-energy electron diffraction (RHEED) oscillation was observed. (2×4) RHEED patterns were observed in both In-supply and P2-supply periods, being different from the GaAs MEE growth. Compared with the conventional MBE, the MEE growth afforded epitaxial layers of better surface morphology and greatly improved photoluminescence properties.
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