Abstract
Band gap engineering of graphene has been intensively studied, but it is still difficult to be realized effectively in practice, which limits its applications in optoelectronics. Here, by using first-principles methods, we predicate that the band gap of graphene can be obviously enlarged up to 0.83 eV and type-I band alignment is also realized in the $\text{graphene}/\mathrm{BN}/M{X}_{2}$ (M = Mo, W; X = S, Se) heterotrilayers when the interlayer distance is compressed. Moreover, the electrons and holes can be confined inside the gap opened graphene layer, and the staggered band alignment can be formed under the presence of electric field as well as the vertical pressure in the $\text{graphene}/\text{BN}/M{X}_{2}$ heterotrilayers. Our results may pay an effective route to tune the gap of graphene and broaden its applications in optoelectronic fields.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
