Abstract
We report on the formation of n-type ultra-nanocrystalline diamond exhibiting high electrical conductivity, σRT ∼104 Ω−1 m−1 by phosphorus ion implantation. The Raman study confirms the restoration of crystallinity upon high vacuum and high-temperature annealing post-implantation process at 850 °C. Varying the fluence enabled us to obtain a reduced thermal activation energy of Ea ∼8 meV with a very high carrier concentration of ne ∼1021 cm−3. Hall measurements confirm the n-type nature in phosphorus-implanted diamond at a high fluence of 1016 ions/cm2, and the nonlinear Hall effect reveals the signature of two band conduction mechanism, one via the impurity band and the other through the conduction band.
Published Version
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
