Abstract
Hexaferrites are believed to be the most candidate for millimeter wave devices due to its large magneto-crystalline anisotropy, high saturated magnetization and low microwave loss. Here, highly c-axis oriented hexaferrite films was deposited on Pt/TiO2/SiO2/Si substrate by a high-efficient and low-cost ultrasonic spray techniques first time. X-ray diffraction result indicate strong (00 l) reflection and Lotgering factor is 0.95, showing this BaM film has high c-axis orientation. Atomic force microscope reveals that hexagonal grains is the range of 200–500 nm. Hysteresis loops reveal the film present nice self-biased properties with saturated magnetization (4πMs) of 4.05 kGs and squareness ratio of 0.91. Ferromagnetic resonance (FMR) linewidth is varying from 255 to 325 in the frequency range of 30–60 GHz, reached a smallest value of 255Oe@55 GHz. These data ensure this BaM film is suitable for use in on-wafer millimeter wave devices such as isolator and circulator.
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