Abstract
M-type barium hexaferrite (BaM) is a promising gyromagnetic material for self-biased microwave\millimeter wave devices because of its large uniaxial magnetocrystalline anisotropy and low microwave loss in high frequency. Due to the limitation of growth conditions, it is difficult to deposit BaM films with enough thickness by PLD, MBE and Magnetron Sputtering for practical application. However, it is demonstrated in present experiment that large area polycrystalline BaM thick films (500μm) with self-biasing (high remanence) and low microwave loss can be successfully fabricated by tape casting. X-ray diffraction and Scanning electron microscopy results indicate that these BaM thick films have highly c-axis oriented crystallographic texture with hexagonal morphology. Magnetic hysteresis loops reveal that samples exhibit excellent properties with a saturate magnetization (4πMs) of 3606G, a high squareness ratio (Mr/Ms) of 0.82. In addition, ferromagnetic resonance (FMR) measurement shows that the FMR linewidth is as small as 431Oe at 48GHz. These parameters ensure these BaM thick films are potentially useful for self-biased microwave\millimeter wave devices such as circulator, phase shifter and filter.
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