Abstract
High-value dynamic resistors (typically 10 9–10 12 Ω) are often required for monitoring small currents and their changes in many measurement systems. It is shown that such resistors can be realized by operating silicon pn-junction diodes within the ± 100 mV bias range. The diode shot noise, in this range of operation, does not pose anymore of a problem than the thermal noise in equivalent ideal resistors. Extremely low current operation also ensures an acceptable level of the flicker or 1 ƒ noise.
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