Abstract
High-value dynamic resistors (typically 10 9–10 12 Ω) are often required for monitoring small currents and their changes in many measurement systems. It is shown that such resistors can be realized by operating silicon pn-junction diodes within the ± 100 mV bias range. The diode shot noise, in this range of operation, does not pose anymore of a problem than the thermal noise in equivalent ideal resistors. Extremely low current operation also ensures an acceptable level of the flicker or 1 ƒ noise.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.