Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors

Abstract

Few layers graphene has been grown on 4H-SiC. Since this material has outstanding electronic properties, we aimed fabricating graphene field-effect transistors on silicon carbide wafer. Growth of the graphene layers was made by e-beam sublimation of silicium under ultra high vacuum (UHV). These layers were patterned and used as channels of transistors with source and drain made of P+ SiC. The different technological steps were checked through Raman spectroscopy, Scanning Electron Microscopy (SEM), and electrical characterizations.