Abstract
Describes voltage-temperature characteristics of diodes at very low temperatures prepared on different epilayer thicknesses and doping profiles. By having a suitable doping profile in the semiconductor or abruptly terminating the rate of growth of the depletion width as a function of temperature by a heavily doped substrate, the voltage-temperature curves below 60K can be linearised.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
