Abstract
A new time-resolved x-ray method of probing the kinetics of interfacial strains in semiconductor heterostructures is presented. High-resolution synchrotron-radiation measurements of the strain relaxation during rapid thermal annealing show that the lattice dilation of an as-grown quantum-well structure is relieved cooperatively by a series of sluggish discontinuous transitions. Well-defined metastable states of strain are observed between the transitions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
