Abstract

AbstractA new time-resolved x-ray method of probing the kinetics of interfacial strains in semiconductor heterostructures is presented. High-resolution synchrotron radiation measurements of the strain relaxation during rapid thermal annealing (RTA) show that the lattice strain of an as-grown strained layer structure GaAs-Inx.Ga1−x-As-GaAs/GaAs is relieved cooperatively by a series of sluggish discontinuous transitions. We find that ion implantation enhances the annealing kinetics of InAlAs strained layers.

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