Abstract
The results of real-time X-ray reflectivity measurements of MOVPE grown indium phosphide surface are presented. At the low growth temperature of 450°C, large decreases of reflectivity were observed, suggesting the formation of indium islands. At higher growth temperature of 550°C, only small changes were observed at high growth rate, indicating the step-flow growth mode. Oscillations longer than mono-layer growth were also observed at 500°C and 550°C, and roughness changes obtained from these oscillations were less than 0.01-nm, suggesting small islands formation on the terrace or step-edge fluctuation during the growth.
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