Abstract
In-situ observation of In droplet formation and annihilation on GaAs(001) at 580°C was made by using a scanning electron microscope and microprobe reflection high-energy electron diffraction, both installed in the MBE growth chamber. It has been found that the density of In droplets depends strongly upon incident In flux and drops quickly to zero at a certain value of In flux. The effects of As pressure and growth steps on the droplet density are discussed.
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