Real-time observation of charging dynamics in hafnium silicate films using MOS capacitance transients

Abstract

This paper presents the results of applying a novel capacitance transient based technique to study the charge trapping dynamics of (HfO 2) x(SiO 2) 1-x (0.5 ⩽ x ⩽ 1) high- k dielectric layers. We detect positive charge generation during the stress and extracted the time-varying charge dynamics. The stress induced electron traps exhibits longer time constants than the as-grown ones. The measured positive charge concentration is found to vary with hafnium concentration. Part of the positive charge is stable and can be detected by C − V measurements.